Growth and properties of Hg(1-x)Cd(x)Te on GaAs substrates by organometallic vapor-phase epitaxy

Details Growth and properties of Hg(1-x)Cd(x)Te on GaAs substrates by organometallic vapor-phase epitaxy Growth and properties of Hg(1-x)Cd(x)Te on GaAs substrates by organometallic vapor-phase epitaxy

Mar 1986

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986jap....59.2253g&link_type=abstract

Journal of Applied Physics (ISSN 0021-8979), vol. 59, March 15, 1986, p. 2253-2255. ITT-supported research.

Physics

5

Crystal Growth, Electron Mobility, Gallium Arsenides, Mercury Cadmium Tellurides, Organometallic Compounds, Vapor Phase Epitaxy, Hall Effect, Morphology, Substrates, X Ray Analysis

Scientific paper

Growth of epitaxial mercury cadmium telluride (Hg/1-x/Cd/x/Te) on (100) GaAs substrates by organometallic vapor-phase epitaxy is described. Transport measurements made on these layers at 80 K indicate an electron mobility greater than 200,000 sq cm/V s for layers of composition x = to about 0.2. An intervening CdTe buffer layer was used to accommodate the large (14 percent) lattice mismatch between these systems, and HgCdTe layers have been grown with CdTe buffer layer thicknesses from 1000 A to 3 microns. It is shown that a CdTe buffer layer of 2-3 microns is necessary to accommodate the misfit dislocations at the CdTe-GaAs interface.

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