Physics
Scientific paper
Dec 1991
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1540..331h&link_type=abstract
In: Infrared technology XVII; Proceedings of the Meeting, San Diego, CA, July 22-26, 1991 (A93-38376 15-35), p. 331-337.
Physics
1
Infrared Detectors, Infrared Imagery, Nondestructive Tests, Solar Arrays, Solar Cells, Cracks, Damage Assessment, Infrared Photography, Manufacturing
Scientific paper
The use of IR technology for solar cell crack detection in the manufacture and inspection of large solar arrays is reviewed. It is concluded that silicon CCD technology was used to develop IR technology for GaAs-on-GaAs at 1.0 micron, and PtSi technology was used to develop GaAs-on-Ge IR technology at 2-2.5 microns. IR crack inspection for the thinner, etched silicon solar cells of large, flexible solar wings was developed to visualize their cracks, because the surfaces of these cells were pitted.
Barney J.
Decker J. Jr. H.
Hodor J. R.
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