Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

Details Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

Sep 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5957...69z&link_type=abstract

Integrated Optics: Theory and Applications. Edited by Pustelny, Tadeusz; Lambeck, Paul V.; Gorecki, Christophe. Proceedings of

Physics

Optics

Scientific paper

Narrow spectral band infrared detectors are required for multispectral infrared imaging. Wavelength selectivity can be obtained by placing passive line filters in front of the detectors, or, the preferred choice, by making the detectors themselfs wavelength selective. We review the first photovoltaic resonant cavity enhanced detectors (RCED) for the mid-IR range. The lead-chalcogenide (PbEuSe) photodetector is placed as a very thin layer inside an optical cavity. At least one side is terminated with an epitaxial Bragg mirror (consisting of quarter wavelength PbEuSe/BaF2 pairs), while the second mirror may be a metal. Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak quantum efficiencies up to above 50% are obtained.

Affiliated with

Also associated with

No associations

Rating

Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1223347