Silicon self-diffusion in MgSiO3 perovskite at 25 GPa

Details Silicon self-diffusion in MgSiO3 perovskite at 25 GPa Silicon self-diffusion in MgSiO3 perovskite at 25 GPa

May 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000pepi..119..299y&link_type=abstract

Physics of the Earth and Planetary Interiors, Volume 119, Issue 3-4, p. 299-309.

Physics

29

Scientific paper

Silicon self-diffusion coefficients in MgSiO3 perovskite were measured under lower mantle conditions. The MgSiO3 perovskite was synthesized and diffusion annealing experiments were conducted at pressure of 25 GPa and temperature of 1673-2073 K using a MA8 type high-pressure apparatus. The diffusion profiles were obtained by secondary ion mass spectrometry. The lattice and grain boundary diffusion coefficients (D1 and Dgb) were determined to be D1 [m2/s]=2.74×10-10 exp(-336 [kJ/mol]/RT) and δDgb [m3/s]=7.12×10-17 exp(-311 [kJ/mol]/RT), respectively, where δ is the width of grain boundary, R is the gas constant and T is the absolute temperature. These diffusion coefficients play a key role for understanding the rheology of the lower mantle.

Affiliated with

Also associated with

No associations

Rating

Silicon self-diffusion in MgSiO3 perovskite at 25 GPa does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Silicon self-diffusion in MgSiO3 perovskite at 25 GPa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon self-diffusion in MgSiO3 perovskite at 25 GPa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1200027