Temperature Field in Graphite-Silicon-Graphite Samples Heated in Monoellipsoidal Mirror Furnaces

Physics

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Scientific paper

The heating of cylindrical compound samples in monoellipsoidal mirror furnaces is analyzed by means of a conduction-radiation model that includes the radiative exchange between the sample and the mirror, and that takes into account the temperature dependence of the physical properties of the materials that form the sample. Graphite-Silicon-Graphite samples are considered. The melting of the Silicon part, and the temperature difference between the two Graphite rods that hold the Silicon melt zone are analyzed. The relative position of the Silicon part in the compound sample turns out to be a very sensitive parameter: it affects (1) the power needed to melt the Silicon zone, and (2) the temperature difference between the solid Graphite rods

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