Semiconductor Crystal Growth Under Microgravity: Results of Float-Zone Technique

Details Semiconductor Crystal Growth Under Microgravity: Results of Float-Zone Technique Semiconductor Crystal Growth Under Microgravity: Results of Float-Zone Technique

Jan 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999adspr..24.1189b&link_type=abstract

Advances in Space Research, Volume 24, Issue 10, p. 1189-1194.

Physics

Scientific paper

Semiconductor crystal growth experiments performed in Germany often used
the Floating-zone technique (FZ). Recent Results of the FZ growth of
Silicon, Si and Galliumantimonide, GaSb in connection with fluid
dynamics will be reported

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