HgCdTe on SI for monolithic focal plane arrays

Details HgCdTe on SI for monolithic focal plane arrays HgCdTe on SI for monolithic focal plane arrays

Aug 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1683..179z&link_type=abstract

Proc. SPIE Vol. 1683, p. 179-190, Infrared Focal Plane Array Producibility and Related Materials, Raymond S. Balcerak; Paul W. P

Physics

Scientific paper

HgCdTe was grown on Si substrates containing CCD and CMOS readout (R/O) circuits. Evaporated aluminum (Al) thin films were used to interconnect MWIR HgCdTe detector arrays with 1 X 64 scanned R/Os to demonstrate monolithic integration and eliminate indium bump bonds required to fabricate hybrid infrared focal plane arrays (IRFPAs). Conformal electroplated gold (Au) thin films on 32 X 64 staring arrays were used to integrate isolated MWIR HgCdTe detectors in each of the 100 micrometers X 100 micrometers unit cells to the input of the CMOS R/Os. Five micron wide Au thin films were used to make a conformal interconnect to 10 micrometers high HgCdTe layers in 40 micrometers X 40 micrometers unit cells within 256 X 256 arrays. Multiple thin film interconnects do not limit the size of the unit cell for dual band and multispectral staring arrays.

Affiliated with

Also associated with

No associations

Rating

HgCdTe on SI for monolithic focal plane arrays does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with HgCdTe on SI for monolithic focal plane arrays, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and HgCdTe on SI for monolithic focal plane arrays will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1169131