Statistical Study of Radiation Hardness of Cms Silicon Sensors

Physics – Medical Physics

Scientific paper

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Scientific paper

Silicon microstrip and pixel detectors are presently the most precise electronic tracking detectors for charged particles in high energy physics. This technology has been chosen for the central trackers of CMS and ATLAS experiments at the LHC (CERN). These detectors are intended to work in a very harsh environment where the luminosity of pp collisions reaches 1034 cm-2s-1. Therefore, the effects of radiation damage must be studied in detail. For that purpose, we have irradiated CMS silicon microstrip sensors with a very high flux of neutrons to achieve a fluence of 1.6 10141MeV-equivalent neutron.cm-2. More than 500 samples were analysed. This work presents the evolution of important sensor characteristics (i.e. bulk depletion voltage, total leakage current, interstrip capacitance, bias resistance) after neutron irradiation.

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