IR focal planes based on GaInSb/InAs superlattices

Details IR focal planes based on GaInSb/InAs superlattices IR focal planes based on GaInSb/InAs superlattices

Oct 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2816...76m&link_type=abstract

Proc. SPIE Vol. 2816, p. 76-83, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, Randolph E. Longshore; J

Physics

Scientific paper

Infrared detectors based on GaInSb/InAs strained layer superlattices promise focal plane arrays spanning the infrared. Response uniformity and operating temperature are projected to be superior to those of long-wavelength HgCdTe devices, without the low quantum efficiencies of multi- quantum well devices. Operation of such superlattice-based mid- and long-wave infrared detectors has been demonstrated, with zero bias impedances approaching the HgCdTe trend line and high quantum efficiencies. Two color, back-to-back diodes have also been demonstrated for the first time, in a p-n-p triple layer heterojunction. Various passivation approaches have been compared.

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