IR detection at room temperature using semiconducting YBaCuO

Details IR detection at room temperature using semiconducting YBaCuO IR detection at room temperature using semiconducting YBaCuO

Oct 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2816...46b&link_type=abstract

Proc. SPIE Vol. 2816, p. 46-57, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, Randolph E. Longshore; J

Physics

1

Scientific paper

Semiconducting YBaCuO thin films are a candidate for infrared bolometers operating at room temperature without the need for temperature control. Semiconducting YBaCuO thin films were fabricated by rf magnetron sputtering onto silicon substrates at room temperature. Room temperature deposition provides compatibility with CMOS technology to allow for the fabrication of low cost infrared imaging arrays with focal plane signal processing. The temperature coefficient of resistance (TCR) of the thin films was measured to be as high as 4% K(superscript -1) over a wide temperature range near 300 K. In this respect, amorphous YBaCuO thin films provided a higher TCR than epitaxial, tetragonal YBa(subscript 2)Cu(subscript 3)O(subscript 6+x) films. The noise voltage at 30 Hz was measured to be typically less than 1 (mu) V/Hz(superscript 1/2). If the thin films are integrated into a typical air-gap thermal isolation structure, the projected responsivity R(subscript v) would be as high as 3.8 multiplied by 10(superscript 5) V/W with 1 (mu) A of current bias providing an estimated detectivity D(superscript *) of 1.6 multiplied by 10(superscript 9) cm Hz(superscript 1/2)/W at a frame frequency of 30 Hz.

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