Physics
Scientific paper
Aug 2010
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010njph...12h3013j&link_type=abstract
New Journal of Physics, Volume 12, Issue 8, pp. 083013 (2010).
Physics
17
Scientific paper
In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman-Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.
Jin Jinshuang
Wei-Yuan Tu Matisse
Yan YiJing
Zhang Wei-Min
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