Silicon negative ion chemistry in the atmosphere - In situ and laboratory measurements

Details Silicon negative ion chemistry in the atmosphere - In situ and laboratory measurements Silicon negative ion chemistry in the atmosphere - In situ and laboratory measurements

May 1982

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1982p%26ss...30..499v&link_type=abstract

Planetary and Space Science, vol. 30, May 1982, p. 499-506.

Physics

13

Atmospheric Chemistry, D Region, Ionospheric Ion Density, Negative Ions, Oxygen Afterglow, Silicon Oxides, Ablation, Heavy Ions, Mass Spectrometers, Meteor Trails, Molecular Ions, Reaction Kinetics, Rocket-Borne Instruments

Scientific paper

The existence of large concentrations of negative ions above the bottom of the atmospheric atomic oxygen layer is indicated by rocket-borne mass spectrometry. Not only do the majority of these atoms have a mass greater than 100 amu, but an ion at mass 76 has been observed with concentrations too large to be considered CO4(-). Reactions involving silicon oxide negative ions, measured in a flowing afterglow system in order to explain observational features, show that the SiO3(-) ion is produced by the reaction of O3(-) and CO3(-) with SiO and remains exceptionally stable. It is suggested that the ions observed at mass 76 may be SiO3, in light of the large silicon input into the atmosphere produced by meteoroid ablation.

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