Optimum barrier height in Schottky-barrier infrared CCD image sensor

Details Optimum barrier height in Schottky-barrier infrared CCD image sensor Optimum barrier height in Schottky-barrier infrared CCD image sensor

Sep 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1685...20t&link_type=abstract

Proc. SPIE Vol. 1685, p. 20-26, Infrared Detectors and Focal Plane Arrays II, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

Scientific paper

Noise equivalent temperature difference (NE(Delta) T) values in a PtSi Schottky-barrier (SB) infrared CCD image sensor are calculated with variations in spectral response, device operating temperature, and internal radiation intensity generated from a lens barrel, using measured values from a recently developed 648 X 487 pixel SB infrared CCD image sensor. The barrier height is allowed to vary, whereas it was fixed before. NE(Delta) T values were calculated as a function of barrier height and were found to have a minimum. The optimum barrier height depends on quantum efficiency coefficient, device operating temperature, and internal radiation intensity.

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