Physics
Scientific paper
Oct 1999
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999inpht..40..387h&link_type=abstract
Infrared Physics & Technology, Volume 40, Issue 5, p. 387-393.
Physics
3
Scientific paper
Two slow transient times in the response of Ge:Ga photoconductors to photon influx are found to fit well to τa=τo(Nd/p1) and τm=τo(S1/p1), derived by analyzing a two-region model, where τo is hole lifetime, Nd is the donor concentration, and p1 and S1 are concentrations of hole and space charge, respectively in the region near the metal-p+ ohmic contact. Both τa and τm are consistent with the response times observed in Ge:Ga photoconductors with Ga concentrations of 2x1014 cm-3 and 1x1014 cm-3 as well as in a stressed Ge:Ga photoconductor under low background photon influx at low temperatures: Those characteristic times are mainly determined by the compensation and carrier density in the crystal. We discuss the relation between the characteristic times proposed in this study and those theoretically derived by Westervelt and Teitsworth [R.M. Westervelt, S.W. Teitsworth, J. Appl. Phys. 57 (1985) 5457-5469], by Fouks [B.I. Fouks, Proc. ESA Symp. Photon Detectors for Space Instrumentation (ESA SP-356), 1992, pp. 167-174], and by Haegel et al. [N.M. Haegel, C.A. Latasa, A.M. White, Appl. Phys. A 56 (1993) 15-21 N.M. Haegel, C.R. Brennan, A.M. White, J. Appl. Phys. 80 (1996) 1510-1514]. As the compensation of Ge:Ga photoconductors decreases, responsivity to step change in photon influx and the ratio of slow response in the total response increases. These results also indicate that the slow response characteristics depend mainly on crystal qualities such as compensation if the metal-p+ contact is good enough.
Fujiwara Motoyasu
Hiromoto Norihisa
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