Effect of the OH ions on SiO2/SPG/SiO2/InSb device stability

Details Effect of the OH ions on SiO2/SPG/SiO2/InSb device stability Effect of the OH ions on SiO2/SPG/SiO2/InSb device stability

Oct 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2274..181s&link_type=abstract

Proc. SPIE Vol. 2274, p. 181-186, Infrared Detectors: State of the Art II, Randolph E. Longshore; Ed.

Physics

Scientific paper

A metal-insulator-semiconductor device, Auger spectroscopy and infrared absorption spectrum have been used to study the impurities in phosphorosilicate glass (sio(subscript 2)/SPG/sio(subscript 2))/InSb. The hydroxyl ions which caused current leakage during high vacuum outgassing were investigated. The current leakage mechanism in InSb p/n diodes have been discussed. The reasons for hydroxyl ions remaining in the passivation films were mentioned.

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