Optical Phonon Sidebands of Electronic Intersubband Absorption in Strongly Polar Semiconductor Heterostructures

Details Optical Phonon Sidebands of Electronic Intersubband Absorption in Strongly Polar Semiconductor Heterostructures Optical Phonon Sidebands of Electronic Intersubband Absorption in Strongly Polar Semiconductor Heterostructures

Jan 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005phrvl..94c7403w&link_type=abstract

Physical Review Letters, vol. 94, Issue 3, id. 037403

Physics

25

Quantum Wells, Ultrafast Processes, Optical Pulse Generation And Pulse Compression, Polarons And Electron-Phonon Interactions, Quantum Wells

Scientific paper

We present the first evidence for a distinct optical phonon progression in the linear and nonlinear intersubband absorption spectra of electrons in a GaN/Al0.8Ga0.2N heterostructure. Femtosecond two-color pump-probe experiments in the midinfrared reveal spectral holes on different vibronic transitions separated by the LO-phonon frequency. These features wash out with a decay time of 80fs due to spectral diffusion. The remaining nonlinear transmission changes decay with a time constant of 380fs. All results observed are described by the independent boson model.

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