Theoretical SI IV line ratios compared to extreme ultraviolet solar observations

Details Theoretical SI IV line ratios compared to extreme ultraviolet solar observations Theoretical SI IV line ratios compared to extreme ultraviolet solar observations

Sep 1988

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1988soph..115..229k&link_type=abstract

Solar Physics (ISSN 0038-0938), vol. 115, no. 2, 1988, p. 229-234. SERC-supported research.

Physics

6

Electron Energy, Emission Spectra, Extreme Ultraviolet Radiation, Silicon, Solar Flares, Solar Spectra, Electron Transitions, Sunspots

Scientific paper

New theoretical electron temperature sensitive emission line ratios in Si IV involving the 3d2D-3p2P and 4s2S-3p2P multiplets at ≡1125 and 816 Å, respectively, are derived using recent R-matrix electron excitation rate calculations. A comparison of these with observational data for a solar active region at the limb obtained with the Harvard S-055 spectrometer on board Skylab reveals that there is good agreement between theory and observation for ratios that include the 2D3/2,5/2-2P3/2 transition at 1128.3 Å.

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