Oct 1982
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1982rpph...45.1163n&link_type=abstract
Reports on Progress in Physics, vol. 45, Oct. 1982, p. 1163-1210. Research supported by the Science and Engineering Research Co
Physics
34
Crystal Defects, Czochralski Method, Polycrystals, Silicon, Solid State Physics, Electron Irradiation, Heat Treatment, Impurities, Neutron Irradiation, Point Defects, Single Crystals
Scientific paper
Aspects of silicon production are discussed. The method of obtaining pure polycrystalline silicon is described, followed by an account of how this material is converted into single-crystal form by the Czochralski pulling method or the float-zone method. The light impurities which are introduced into silicon by the production technique, including oxygen, nitrogen, carbon, hydrogen, and boron, are discussed. The effects of heat treatments and metallic contamination are considered. Structural defects derived from the aggregration of intinsic point defects in the crystals as they cool are addressed, as is irradiation damage due to low-temperature electron irradiation, high doses of electron irradiation at room temperature, and neutron irradiation. Finally, some aspects of high-temperature diffusion are discussed and attempts are made to correlate the data with that derived from the irradiation studies.
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