Physics
Scientist
Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
Institute of Semiconductor Physics, 630090 Novosibrisk, Russia
Atomic and electronic engineering of p-GaAs-(Cs, O)-vacuum interface
Development of spin polarized electron photocathodes: GaAs-GaAsP superlattice and GaAs-AlGaAs superlattice with DBR
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