Physics
Scientist
90 to 180 GHz Heterostructure Monolithic Integrated Doubler
GaN-based NDR Devices for THz Generation
Low-Frequency Noise Characteristics of GaAs Schottky Diodes Fabricated by In-Situ Electrochemical Process and Comparison to Evaporation Process
Low-Noise MOVPE-Grown Planar InGaAs Mixer Diodes
Planar Varactor and Mixer Diodes Fabricated Using InP-Based Materials
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