Physics
Scientist
Materials Department, University of California, Santa Barbara, CA 93106-5050, USA
Auger recombination rates in nitrides from first principles
Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior
Defect Formation Energies without the Band-Gap Problem: Combining DFT and GW for the Silicon Self-Interstitial
Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
Experimental electronic structure of In2O3 and Ga2O3
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