Silicon ultraviolet photodiode processing via integrated MOS capacitors

Details Silicon ultraviolet photodiode processing via integrated MOS capacitors Silicon ultraviolet photodiode processing via integrated MOS capacitors

Sep 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3818..189v&link_type=abstract

Proc. SPIE Vol. 3818, p. 189-197, Ultraviolet Atmospheric and Space Remote Sensing: Methods and Instrumentation II, George R. Ca

Computer Science

Scientific paper

A conventional pn diffused junction silicon photodiode originally developed for visible and near infrared light was optimized for ultraviolet wavelength spectrum. Optimization was performed with numerical simulation tools and experimental work. The results of modeling and experiment are compared and discussed. MOS capacitor was integrated on active region of photodiode in order to control the quality of fabricated surface passivation layer. p(superscript +)n junction structure and antireflective coating have been identified as two most important design and processing steps.

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