Silicon Pressure Sensor for Space Applications

Details Silicon Pressure Sensor for Space Applications Silicon Pressure Sensor for Space Applications

Oct 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004esasp.555e..46n&link_type=abstract

Proceedings of the 4th International Spacecraft Propulsion Conference (ESA SP-555). 2-9 June, 2004, Chia Laguna (Cagliari), Sard

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A novel piezoresistive silicon pressure sensor has been developed for full-scale measurement from 20 bar to 350 bar for space propulsion applications. The silicon sensing element has a tubular design with an externally located diffused resistor bridge. The difference in stress in the transversal direction and the axial direction of the tube is proportional to pressure and is measured with the piezoresistive resistor bridge. The concept is favourable due to several key properties resulting from small dimensions and deflections, high material rigidity and a large output signal. The overload capability is typically several times the full-scale pressure, since applied pressure only generates compressive stress. The sensing element is fabricated by standard silicon planar technology and bulk micro machining processes, such as silicon fusion bonding and electrochemical etching. The resistor bridge is fabricated by ion implanted diffusions, and is electrically connected with a standard metal layer.

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