Other
Scientific paper
Jul 1994
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2225..293y&link_type=abstract
Proc. SPIE Vol. 2225, p. 293-298, Infrared Detectors and Focal Plane Arrays III, Eustace L. Dereniak; Robert E. Sampson; Eds.
Other
Scientific paper
We have used the liquid phase epitaxy (LPE) and vapor phase transport epitaxy (VPTE) growth methods to fabricate double heterojunction (DH) CaTe/HgCaTe/CaZnTe and heterojunction CaTe/HgCaTe thin film materials. The detector of zero tunnel leakage current has been developed successfully by using these materials. The advantages of the VPTE method are as follows: (1) There is increased stability of surface of detector; (2) bulk band-to-band tunnel effect in detector will not occur and trap- assisted tunnel effect will be reduced owing to the N(superscript +)-p junction and IR absorption region of the detector separated by using this DH material; (3) Ro is enhanced at the same time, so that sensing circuit of FPA can attain much higher injection efficiency; (4) we overcome mother solution of the Te-rich back melt HgCaTe by LPE growth CaTe on HgCaTe/CaZnTe, and (5) this growth method hardly changes characteristics of HcCgTe.
Wu Changshu
Yang Wenzhong
Zhang Honggui
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