Characterization of a VPE gallium arsenide x-gamma-ray detector

Details Characterization of a VPE gallium arsenide x-gamma-ray detector Characterization of a VPE gallium arsenide x-gamma-ray detector

Nov 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3445..615b&link_type=abstract

Proc. SPIE Vol. 3445, p. 615-622, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IX, Oswald H. Siegmund; Mark A. Gummin

Astronomy and Astrophysics

Astronomy

Scientific paper

An x-(gamma) ray detector constituted by a 1 mm(superscript 2) Schottky junction on Vapor Phase Epitaxy gallium arsenide is presented. The junction has been characterized by means of capacitance and current vs. voltage analyses, finding a good agreement with the theory. Thanks to the low impurity concentration of the undoped epitaxial layer, an active region depth of 20 micrometers is reached at 100 V bias voltage. A reverse current density of 18 nA/cm(superscript 2) has been measured at 290 K in operating condition. The detector has been tested at room temperature with a (superscript 241)Am X-(gamma) source; the pulser line shows 1.41 keV FWHM and the 59.54 keV line shows 1.47 keV FWHM, corresponding to an energy resolution of 2.5 percent.

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