Hyperchanneling of Ne^10+ ions through the thick <111> Si crystals

Details Hyperchanneling of Ne^10+ ions through the thick <111> Si crystals Hyperchanneling of Ne^10+ ions through the thick <111> Si crystals

Jul 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008pobeo..84..169b&link_type=abstract

Publications of the Astronomical Observatory of Belgrade, vol. 84, pp. 169-172

Astronomy and Astrophysics

Astronomy

Scientific paper

In this work we investigate the angular distributions of Ne^10+ ions hyperchanneled along the <111> direction in a thick silicon crystals as a function of the reduced crystal thickness. The ion energy is 60 MeV and the reduced crystal thickness, Lambda, is varied from 10 to 21, corresponding to the crystal length from 6.2 to 13.1 mu m. We follow the ion trajectory in the triangular region of the crystal channel determined by the maximum closed equipotential line around the channel axis, where the hyperchanneling occurs. The Henon-Heiles type of the ion-crystal interaction potential is used as the model of the continuum interaction potential obtained assuming the Moliere expression for the ion-atom interaction potential. The angular distributions are generated using the numerical solution of ion's equations of motion in the transverse plane and the computer simulation method. The obtained results show periodicity of the angular distribution, with the period of 0.5. The values of Lambda = 10, 10.5, 11,..., 21, correspond to the beginnings of periodic cycles of the angular distribution. The effect of zero-degree focusing is observed for these values of variable Lambda. Also, one can observe the formation of the symmetrical ridges in the angular distributions around the centre of the scattering angle plane, whose number increases and the average distance between them decreases as the variable Lambda increases.

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