High-well-capacity InSb infrared arrays for the 1 to 5 um wavelength range

Astronomy and Astrophysics – Astronomy

Scientific paper

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Scientific paper

Photovoltaic detectors for ground based astronomical applications have experienced dramatic improvements during the last decade. Both the array format has been increased and the pixel performance has improved and is approaching fundamental limits. In view of this development a detection limit for the photon flux of the ideal detector will be derived, depending only on the temperature and the impedance of the detector. It is shown, that this limit is approximated by state of the art infrared arrays for long on chip integrations. In a multimode instrument covering the 1 to 5 micrometers spectral range a detector has to fulfill very different requirements. For high resolution spectroscopy low darkcurrent and read noise are required. For broad band thermal imaging a high well capacity is needed to reduce the speed required to read out the array before it saturates. Different possibilities to increase the well depth of infrared arrays have been investigated. First, an extra capacity can be added to the gate of the source follower in the unit cell of the multiplexer. Alternatively, the pixel capacity can be increased by increasing the doping concentration of the detector diode. The third possibility is to apply a large reverse bias voltage. This requires exceptionally good low doped InSb junctions which can be operated at a reverse bias voltage of 1 volt.

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