Development of Silicon Strip Detectors for a Medium Energy Gamma-ray Telescope

Details Development of Silicon Strip Detectors for a Medium Energy Gamma-ray Telescope Development of Silicon Strip Detectors for a Medium Energy Gamma-ray Telescope

2003-02-24

arxiv.org/abs/astro-ph/0302500v1

Nucl.Instrum.Meth. A512 (2003) 220-228

Astronomy and Astrophysics

Astrophysics

9 pages, 13 figures, to appear in NIM-A (Proceedings of the 9th European Symposium on Semiconductor Detectors)

Scientific paper

10.1016/S0168-9002(03)01897-7

We report on the design, production, and testing of advanced double-sided silicon strip detectors under development at the Max-Planck-Institute as part of the Medium Energy Gamma-ray Astronomy (MEGA) project. The detectors are designed to form a stack, the "tracker," with the goal of recording the paths of energetic electrons produced by Compton-scatter and pair-production interactions. Each layer of the tracker is composed of a 3 x 3 array of 500 micron thick silicon wafers, each 6 cm x 6 cm and fitted with 128 orthogonal p and n strips on opposite sides (470 micron pitch). The strips are biased using the punch-through principle and AC-coupled via metal strips separated from the strip implant by an insulating oxide/nitride layer. The strips from adjacent wafers in the 3 x 3 array are wire-bonded in series and read out by 128-channel TA1.1 ASICs, creating a total 19 cm x 19 cm position-sensitive area. At 20 degrees C a typical energy resolution of 15-20 keV FWHM, a position resolution of 290 microns, and a time resolution of ~1 microsec is observed.

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