On the temperature determination in early B-stars using absorption lines of SI II, III, and IV

Details On the temperature determination in early B-stars using absorption lines of SI II, III, and IV On the temperature determination in early B-stars using absorption lines of SI II, III, and IV

Feb 1984

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1984a%26a...131..390e&link_type=abstract

Astronomy and Astrophysics (ISSN 0004-6361), vol. 131, no. 2, Feb. 1984, p. 390-393.

Astronomy and Astrophysics

Astrophysics

6

B Stars, Early Stars, Silicon, Stellar Atmospheres, Stellar Spectra, Stellar Temperature, Absorption Spectra, Ionization, Spectral Line Width

Scientific paper

Fully line-blanketed LTE model atmospheres (Kurucz, 1979) in the range 15,000K < Teff < 30,500K have been used to compute equivalent widths and profiles of silicon lines in different stages of ionization. A grid of model atmospheres and set of Si-lines have been calculated without line blanketing using the Kurucz-program. The latter are in good agreement with the line profiles and equivalent widths obtained with the only hydrogen line-blanketed LTE model atmosphere programs of Wolf (1973) and Schönberner (1973). The ratios Wλ(Si II)/Wλ(Si III) and Wλ(Si III)/Wλ(Si IV) of the equivalent widths used as indicator for the effective temperature yield different temperatures when applied to different model atmospheres. The temperature differences ΔT = Tb - Tnb range from -800K at Teff = 15,000K up to -2200K at Teff = 25,000K.

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