Dielectronic recombination at low temperatures. III - Recombination coefficients for Mg, Al, SI

Details Dielectronic recombination at low temperatures. III - Recombination coefficients for Mg, Al, SI Dielectronic recombination at low temperatures. III - Recombination coefficients for Mg, Al, SI

Jun 1986

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986a%26as...64..545n&link_type=abstract

Astronomy and Astrophysics Supplement Series (ISSN 0365-0138), vol. 64, no. 3, June 1986, p. 545-555.

Astronomy and Astrophysics

Astrophysics

90

Aluminum, Electron Recombination, Magnesium, Recombination Coefficient, Silicon, Astronomical Spectroscopy, Atomic Energy Levels, Tables (Data), Temperature Dependence, Transition Probabilities

Scientific paper

Effective dielectronic recombination coefficients are calculated for the total recombination, as well as for selected lines and ground and metastable terms of ions of Mg, Al and Si. The authors restrict the calculation to those ions for which the recombining ion has n = 3 valence electrons. Coupling schemes are discussed, and it is concluded that in most cases pure LS coupling is not appropriate for the resonance states. The effective recombination coefficients are fitted to a convenient function of temperature in the range 103K to 6x104K.

Affiliated with

Also associated with

No associations

Rating

Dielectronic recombination at low temperatures. III - Recombination coefficients for Mg, Al, SI does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Dielectronic recombination at low temperatures. III - Recombination coefficients for Mg, Al, SI, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectronic recombination at low temperatures. III - Recombination coefficients for Mg, Al, SI will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1829603