Wavelength division multiplexing scheme for radio-frequency single electron transistors

Details Wavelength division multiplexing scheme for radio-frequency single electron transistors Wavelength division multiplexing scheme for radio-frequency single electron transistors

Feb 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002aipc..605..289s&link_type=abstract

LOW TEMPERATURE DETECTORS: Ninth International Workshop on Low Temperature Detectors. AIP Conference Proceedings, Volume 605, p

Computer Science

Microwave Circuits, Single Electron Devices

Scientific paper

We describe work on a wavelength division multiplexing scheme for radio-frequency single electron transistors. We use a network of resonant impedance matching circuits to direct applied rf carrier waves to different transistors depending on carrier frequency. Using discrete components, we made a two-channel demonstration of this concept and successfully reconstructed input signals with small levels of cross coupling. A lithographic version of the rf circuits had measured parameters in agreement with electromagnetic modeling, with reduced cross capacitance and inductance, and should allow 20 to 50 channels to be multiplexed. .

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