Computer Science
Scientific paper
Jul 1975
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975army.reptu....b&link_type=abstract
Final Technical Report Army Electronics Command, Fort Monmouth, NJ.
Computer Science
Diffusion, Minority Carriers, Photodiodes, Semiconductors (Materials), Cadmium Tellurides, Germanium, Infrared Detectors, Mercury Compounds, Silicon
Scientific paper
It is shown that the minority carrier diffusion contribution to the ac quantum efficiency of a semiconductor photodiode is a function of the product of the absorption coefficient (alpha) and the diffusion length (L) of the semiconductor material. Since L is essentially constant (e.g. over a considerable temperature range) for a given detector, the dependence of the ac quantum efficiency on alpha L becomes significant near the absorption edge of the semiconductor material where the value of alpha decreases rapidly with increasing wavelength and can change, due to a shift of the band edge, with temperature. The diffusion portion of the ac quantum efficiency is investigated for a variety of input signals: impulse, step, square, and triangular pulses, and sinusoidally modulated signals. In general, the magnitude and cut-off frequency degrade as alpha decreases. The results are applied to photodiodes of silicon, germanium, and mercury cadmium telluride.
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