Other
Scientific paper
Dec 2003
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003spie.5209..168h&link_type=abstract
Materials for Infrared Detectors III. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volum
Other
Scientific paper
Intermixing effects of MOCVD (metal organic chemical vapor deposition) grown InGaAs SAQDs (self-assembled quantum dots) covered with SiO2 and SiNx-SiO2 dielectric capping layers were investigated. The intermixing of SAQDs was isothermally performed at 700°C by varying annealing time under the N2-gas ambient. It was confirmed from the PL measurement after the thermal annealing that, the emission energy of SAQDs was blue-shifted by 190 meV, the FWHM (full width at half maximum) was narrowed from 76 meV to 47 meV and the PL intensity was increased. SiNx-SiO2 double capping layer have been found to induce larger PL intensity after the thermal annealing of SAQDs compared to SiO2 single capping layer. The results can be implemented for increasing quantum efficiency and tuning the detection wavelength in quantum dot infrared photodetector (QDIP).
Cho Woon Jo
Choi Won Jun
Han Haewook
Han Il Ki
Hwang Sung Ho
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