Population ratios for the fine structure ground state of SI II applicable to the interstellar medium

Details Population ratios for the fine structure ground state of SI II applicable to the interstellar medium Population ratios for the fine structure ground state of SI II applicable to the interstellar medium

Jun 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985mnras.214p..37k&link_type=abstract

Monthly Notices of the Royal Astronomical Society (ISSN 0035-8711), vol. 214, June 1, 1985, p. 37P-40P. Research supported by th

Astronomy and Astrophysics

Astronomy

24

Elementary Excitations, Fine Structure, Ground State, Interstellar Matter, Silicon, Electron Density (Concentration), H Ii Regions, Nebulae

Scientific paper

Using recent R-matrix calculations of electron excitation rates for the 3s23p2P1/2-3s23p2P3/2 fine structure transition in Si II, the electron density sensitive population ratio n(2P3/2)/n(2P1/2) has been derived for the ranges of temperature (100 - 20000K) and hydrogen density (0 - 1000 cm-3) applicable to H I and H II regions. The results differ appreciably from those of Smeding & Pottasch, and lead to electron density estimates approximately 30 to 40 per cent larger.

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