Other
Scientific paper
Jul 2007
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007epjb...58...31b&link_type=abstract
The European Physical Journal B, Volume 58, Issue 1, July I 2007, pp.31-36
Other
3
Scattering By Phonons, Magnons, And Other Nonlocalized Excitations, Quantum Wells, Phonon-Electron And Phonon-Phonon Interactions
Scientific paper
A variational method and a memory function approach are adopted to investigate the electron mobility parallel to the interface for a model AlxGa1-xAs/GaAs heterojunction and its pressure effect by considering optical phonon modes (including both of the bulk longitudinal optical (LO) in the channel side and interface optical (IO) phonons). The influence of a realistic interface heterojunction potential with a finite barrier and conduction band bending are taken into account. The properties of electron mobility versus Al concentration, electronic density and pressure are given and discussed, respectively. The results show that the electron mobility increases with Al concentration and electronic density, whereas decreases with pressure from 0 to 40 kbar obviously. The Al concentration dependent and the electron density dependent contributions to the electron mobility from the scattering of IO phonons under pressure becomes more obvious. The variation of electron mobility with the Al concentration and electron density are dominated by the properties of IO and LO phonons, respectively. The effect of IO phonon modes can not be neglected especially for higher pressure and electronic density.
Bai X. P.
Ban S. L.
No associations
LandOfFree
Electron mobility for a model Alx Ga1-x As/GaAs heterojunction under pressure does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Electron mobility for a model Alx Ga1-x As/GaAs heterojunction under pressure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron mobility for a model Alx Ga1-x As/GaAs heterojunction under pressure will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1662982