Comparative analysis of low-doped bulk, LPE and MBE grown n-Hg1-xCdxTe material and photoconductors based on it

Details Comparative analysis of low-doped bulk, LPE and MBE grown n-Hg1-xCdxTe material and photoconductors based on it Comparative analysis of low-doped bulk, LPE and MBE grown n-Hg1-xCdxTe material and photoconductors based on it

Oct 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5964...28n&link_type=abstract

Advances in Optical Thin Films II. Edited by Amra, Claude; Kaiser, Norbert; Macleod, H. Angus. Proceedings of the SPIE, Volume

Computer Science

Performance

Scientific paper

Narrow-gap low-doped n-Hg1-xCdxTe (x = 0.18-0.35) material with electron concentration at liquid nitrogen temperature (77 K) n77≈(1-10)×1014 cm-3 is preferably used by all manufacturers of infrared (IR) radiation detectors as absorbing layer (n-absorber) of high performance Mid-Wave (MWIR), Long-Wave (LWIR) and Very Long-Wave (VLWIR) photoconductors (PC) covering spectral range from 3 to 25 μm. Low-doped n-Hg1-xCdxTe (x = 0.21-0.65) material with n77≈(1-5)×1015 cm-3 is perspective for development and production of novel small- pitched photovoltaic (PV) Short-Wave (SWIR), MWIR, LWIR and multi- color infrared focal plane arrays (FPA) covering spectral range from 1.3 to 12 μm. Novel FPA is based on photodiodes (PD) with p-n junction opposite to usually used n+-p junction. PD with optimal p-n junction could have lower dark current value than same size n+-p junction. It is very desirable for adequate multiplexing of PD arrays by Silicon Read-out Integrated Circuits (ROIC). Low-doped n-Hg1-xCdxTe could be grown by different techniques: bulk crystallization; liquid phase epitaxy (LPE); molecular beam epitaxy (MBE) having seriously different referring (melting/crystallization/annealing) temperatures. Objective of the present work was to examine and compare some crystalline, chemical and physical parameters and impact of PC device performance on their variation.

Affiliated with

Also associated with

No associations

Rating

Comparative analysis of low-doped bulk, LPE and MBE grown n-Hg1-xCdxTe material and photoconductors based on it does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Comparative analysis of low-doped bulk, LPE and MBE grown n-Hg1-xCdxTe material and photoconductors based on it, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Comparative analysis of low-doped bulk, LPE and MBE grown n-Hg1-xCdxTe material and photoconductors based on it will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1657947