New technological development for far-infrared bolometer arrays

Details New technological development for far-infrared bolometer arrays New technological development for far-infrared bolometer arrays

Jul 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3698..284a&link_type=abstract

Proc. SPIE Vol. 3698, p. 284-290, Infrared Technology and Applications XXV, Bjorn F. Andresen; Marija Strojnik Scholl; Eds.

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CEA.S/DAPNIA/DSM and LETI/CEA.S are developing since 1996 a new technology for the realizing of far IR bolometer arrays sensitive in submillimeter wavelength range. The operating temperature is 0.3 Kelvin. Microtechnologies on silicon and flip/chip techniques are used for the detector fabrication and CMOS technology is used for the multiplexer and the readout integrated circuit. We present the concept that we have defined for the focal pane architecture and the readout principle design for 16 X 16 or 32 X 32 array. The first experimental result obtained on optical, electrical and thermal parameters are presented.

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