Novel backside structure with improved energy resolution

Details Novel backside structure with improved energy resolution Novel backside structure with improved energy resolution

Oct 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3765..285p&link_type=abstract

Proc. SPIE Vol. 3765, p. 285-290, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X, Oswald H. Siegmund; Kathryn A. Flan

Astronomy and Astrophysics

Astronomy

Scientific paper

We have experimentally shown that heavily doped p+ layer at the silicon-silicon dioxide interface leads to charge losses in the signal electron clouds due to surface recombination and results in degraded energy resolution of the response of backside illuminated AXAF CCDs to low energy x-rays. The size of secondary ionization cloud generated by an incident x-ray photon can be much larger than that predicted from higher energy electron range-energy relations as the frontside illuminated CCD, while having high quantum efficiency at low energies. It shrinks the area of the heavily doped silicon to less than 2 percent of the pixel are, thus dramatically reducing recombination losses. If this design is combined with fully depleted silicon structures, it promises a highly efficiency x-ray sensor with a good energy resolution throughput the 0.1-15 keV band.

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