In-situ measurement of the channel stop structure in AXAF CCDs

Details In-situ measurement of the channel stop structure in AXAF CCDs In-situ measurement of the channel stop structure in AXAF CCDs

Oct 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3765..278p&link_type=abstract

Proc. SPIE Vol. 3765, p. 278-284, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X, Oswald H. Siegmund; Kathryn A. Flan

Astronomy and Astrophysics

Astronomy

Scientific paper

We present results from recent measurements of the channel stop structures in AXAF CCDs. We discuss refinements of a technique that uses a thin metal film with small, periodically spaced holes to restrict incident photons to well-defined regions of the pixel, providing a way to probe sub-pixel structure. By making monochromatic measurements at different energies, we can reliably determine the width and thickness of the channel stop pPLU-type silicon implant and its insulating oxide layer.

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