Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics

Details Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics

Aug 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3553...48l&link_type=abstract

Proc. SPIE Vol. 3553, p. 48-60, Detectors, Focal Plane Arrays, and Imaging Devices II, Pingzhi Liang; Marc Wigdor; William G. Fr

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This paper briefly presents the recent development of IR physics and photo-electronic device, the HgCdTe detector is successfully used in the scanning radiometer on the meteorological satellites. As an important developing direction for the photo-electronic device, the low dimensional semiconductor structures are investigated. The interface intermixing technique has been developed to modify the energy band structure of multi-quantum wells and consequently response wavelength of the quantum well IR photoconductive detector. The quantum wires have been successfully grown and demonstrate good optical properties.

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