Far-infrared high-performance lead telluride-based photodetectors for spaceborne applications

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Scientific paper

Doping of the lead telluride and related alloys with the group III impurities results in an appearance of the unique physical features of a material, such as persistent photoresponse, enhanced responsive quantum efficiency, radiation hardness and many others. We review the physical principles of operation of the photodetecting devices based on the group III-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, new readout technique, and others. The advantages of IR photodetecting system based on the group III-doped IV-VI in comparison with the modern photodetectors are summarized. Some new ideas concerning the possibilities provided by the doped IV-VI are presented.

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