The potential for high performance HgCdTe arrays at 4 microns

Details The potential for high performance HgCdTe arrays at 4 microns The potential for high performance HgCdTe arrays at 4 microns

Oct 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989tidt.work...81r&link_type=abstract

In NASA, Ames Research Center, Proceedings of the Third Infrared Detector Technology Workshop p 81-84 (SEE N90-21313 14-35)

Astronomy and Astrophysics

Astronomy

Diodes, Infrared Detectors, Jfet, Mercury Cadmium Tellurides, Arrays, Astronomy, Bias, High Temperature, Low Temperature

Scientific paper

The potential of existing technology at Rockwell International in terms of the goals for astronomical detector arrays in the 3 to 5 micron interval is evaluated. Measurements have been obtained for a number of samples of HgCdTe diodes manufactured by Rockwell International. All the diodes reported on here had cutoff wavelengths at high temperatures of 4.6 to 4.7 microns. Although no confirming measurements were made, the cutoff wavelength is expected to move to 5 microns or beyond at the low temperatures of our tests. Diode sizes ranged from 20 to 150 microns. The test program yielded full diode curves and relative response at 3.4 microns for the sample diodes as a function of temperature. Dark currents are quoted below as the current passing through the diode with a back bias of 50 mV. The various diode types showed a wide range of behavior, both with regard to dark current and responsibility. The test results for one of the best diode types are illustrated. This detector has a size of 148 microns and a cutoff wavelength of 4.61 microns.

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