Experimental investigation of MBE GaAs rib waveguides at 10.6 microns

Details Experimental investigation of MBE GaAs rib waveguides at 10.6 microns Experimental investigation of MBE GaAs rib waveguides at 10.6 microns

Oct 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1107..128s&link_type=abstract

IN: Infrared detectors, focal plane arrays, and imaging sensors; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989 (A90

Computer Science

Performance

Carbon Dioxide Lasers, Gallium Arsenides, Molecular Beam Epitaxy, Waveguide Lasers, Dielectrics, Snells Law, Standing Waves, Transmission Lines

Scientific paper

Results are evaluated from recent investigations of the performance of n/n(+)-GaAs rib waveguides fabricated by MBE and reactive-ion etching. A simple, 'effective index' analysis method is used to predict bound-mode propagation constants; a comparison with alternative analyses shows the method to be sufficiently accurate for the geometries in question. Intensity curves are obtained experimentally as a function of incident angle, for correlation with theoretical, lower-order modes. A prism-coupling approach is developed which not only allows experimenters to excite and observe the bands of a rib waveguide, but to empirically determine their values.

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