Unfulfilled needs in IR astronomy focal-plane readout electronics

Details Unfulfilled needs in IR astronomy focal-plane readout electronics Unfulfilled needs in IR astronomy focal-plane readout electronics

Jul 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1684..168l&link_type=abstract

In: Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992 (A93-53076 23-33), p. 168-174.

Astronomy and Astrophysics

Astronomy

Cmos, Field Effect Transistors, Focal Plane Devices, Infrared Detectors, Infrared Telescopes, Readout, Background Noise, Infrared Astronomy, Space Infrared Telescope Facility, Technology Assessment

Scientific paper

The NOAO's 8-m IR optimized telescope for Mauna Kea and NASA's SIRTF show that from 1 to 200 microns there are a number of unfulfilled needs in readout electronics. These include: extremely low readnoise, less than 10 electrons, stable operation at temperatures as low as 2 K, high well capacity, greater than 1 e 7 electrons, and integration times from 30 msec to over 100 sec. Sensors for adaptive optics systems are required with readnoise less than 10 electrons and response times of 30 msec. They should be highly efficient from 1 to 2.5 microns, but may have small formats. Ground-based imagers at these wavelengths need comparable readnoise but longer integration times, and the largest possible formats are essential. To achieve these goals improved cryogenic MOSFETS are essential and complete cryogenic CMOS circuits are highly desirable. Experimental cryoptimized MFETS promise to exceed the above noise requirements at 77 K and approach the needs at 2 K.

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