Powder metallurgy of Ge, Si, and Ge-Si

Details Powder metallurgy of Ge, Si, and Ge-Si Powder metallurgy of Ge, Si, and Ge-Si

Mar 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993jcrgr.128.1197s&link_type=abstract

Journal of Crystal Growth, Volume 128, Issue 1-4, p. 1197-1202.

Computer Science

1

Scientific paper

id="ab1"Planetary ball-milling and pressing behaviour of Ge, Si and Ge-Si powder mixtures are investigated. Scanning and transmission electron microscopy observations revealed the different microstructure of the two elements after milling: Ge remains in a microcrystalline state, whereas Si can be comminuted into grains consisting of nanocrystalline regions. Planetary milling of the two elements together, using agate balls and vial, did not reveal any compound formation. By hot-isostatic pressing, pure Ge and Ge-Si mixtures were densified to a higher value than pure Si. This denotes a plastic flow of the Ge component at a process temperature of 800°C. The microhardness of hot-pressed Ge reaches the bulk value; hot-pressed Si is very soft. Energy dispersive X-ray analysis and X-ray diffraction did not detect any impurity contamination from vial and milling media wear. Moreover, by electrical transport measurements it turned out that the net carrier concentration density resulting from electrical active impurities introduced by the milling and pressing process is below 2 x 1016 cm 3 at room temperature.

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