THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs

Details THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs

Dec 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4490...96l&link_type=abstract

Proc. SPIE Vol. 4490, p. 96-103, Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications, Andrew R. Pir

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Significant difference in temporal and spectral characteristics of THz
radiation emitted by large- (1mm) and small- (5micrometers ) aperture
dipole antennas fabricated on arsenic-ion-implanted GaAs and undoped
semi-insulating GaAs is reported and attributed to the geometry of the
antenna.

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