Gate imaging for 0.09-µm logic technology: comparison of single exposure with assist bars and the CODE approach

Details Gate imaging for 0.09-µm logic technology: comparison of single exposure with assist bars and the CODE approach Gate imaging for 0.09-µm logic technology: comparison of single exposure with assist bars and the CODE approach

Jun 2003

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003spie.5040.1231t&link_type=abstract

Optical Microlithography XVI. Edited by Yen, Anthony. Proceedings of the SPIE, Volume 5040, pp. 1231-1240 (2003).

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Logic

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Scientific paper

In order to address some specific issues related to gate level printing of the 0.09µm logic process, the following mask and illumination solutions have been evaluated. Annular and Quasar illumination using binary mask with assist feature and the CODE (Complementary Double Exposure) technique. Two different linewidths have been targeted after lithography: 100nm and 80nm respectively for lowpower and high-speed applications. The different solutions have been compared for their printing performance through pitch for Energy Latitude, Depth of Focus and Mask Error Enhancement Factor. The assist bar printability and line-end control was also determined. For printing the 100nm target, all tested options can be used, with a preference for Quasar illumination for the gain in Depth of Focus and MEEF. For the 80nm target however, only the CODE technique with Quasar give sufficient good results for the critical litho parameters.

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