Thick Silicon Detectors with High Spectral Resolution at Room Temperature for Low-energy Solar X-ray Spectral Studies

Details Thick Silicon Detectors with High Spectral Resolution at Room Temperature for Low-energy Solar X-ray Spectral Studies Thick Silicon Detectors with High Spectral Resolution at Room Temperature for Low-energy Solar X-ray Spectral Studies

May 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996aas...188.8505d&link_type=abstract

American Astronomical Society, 188th AAS Meeting, #85.05; Bulletin of the American Astronomical Society, Vol. 28, p.962

Astronomy and Astrophysics

Astronomy

Scientific paper

We are evaluating P-Intrinsic-N (PIN) silicon photodiodes for use as X-ray detectors in the energy range from ~ 1 to ~ 20 keV. They offer high spectral resolution ( ~ 1 keV) at or near room temperature, providing significant advantages over conventional lithium-drifted silicon detectors that must be cooled to liquid-nitrogen temperatures to achieve the same resolution. Detectors are now available from Micron Semiconductors, Ltd., Lancing, England, with thicknesses of up to 2000 microns and areas up to 4 cm(2) . These detectors have the capability to do high-time-resolution spectral studies of solar flare X-ray emissions.

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