Room-temperature InGaAs camera for NIR imaging

Details Room-temperature InGaAs camera for NIR imaging Room-temperature InGaAs camera for NIR imaging

Oct 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.1946..436c&link_type=abstract

Proc. SPIE Vol. 1946, p. 436-443, Infrared Detectors and Instrumentation, Albert M. Fowler; Ed.

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A room temperature camera based on a 128 X 128 pixel InGaAs focal plane array (FPA) is described. The photodiode array (PDA) was a backside-illuminated device with an In(subscript .53)Ga(subscript .47)As epitaxial active layer deposited on an InP substrate. The PDA was bump- bonded to a silicon CMOS readout multiplexer. The FPA was sensitive from below 0.9 micrometers (the cutoff of the substrate) to 1.7 micrometers (the bandgap of the active layer). At room temperature, the mean detectivity of the FPA, D(superscript *)(subscript (lambda) pk), exceeded 10(superscript 13) cm-(root)Hz/W and increased to 3.5 X 10(superscript 14) cm-(root)Hz/W when cooled to 230 K. Potential applications for this wavelength band are discussed.

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