Effective collision strengths for SI II

Details Effective collision strengths for SI II Effective collision strengths for SI II

Feb 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991mnras.248..827d&link_type=abstract

Monthly Notices of the Royal Astronomical Society (ISSN 0035-8711), vol. 248, Feb. 15, 1991, p. 827, 828.

Astronomy and Astrophysics

Astronomy

32

Cosmic Plasma, Electron Impact, Line Spectra, Molecular Collisions, Silicon, Ultraviolet Spectra, Atomic Energy Levels, Electron Energy, Electron Transitions, Molecular Excitation

Scientific paper

Collision strengths are presented for electron impact excitation among the eight lowest LS states (corresponding to 15 levels including the splitting of the doublet and quartet terms) of Si II calculated using the R-matrix method. These collision strengths are used to deduce effective collision strengths adopting a Maxwellian electron energy distribution for electron temperatures between log Te = 3.6 and 4.6. Results are presented for all transitions among the seven lowest levels and also for transitions from the ground state 3s2 3p2 P(J) levels to more excited states.

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